Tech Next Lab

In TNL-Injector simulator, a horizontal metal-organic chemical vapor deposition (MOCVD) reactor. Gas-phase and surface reactions occurring in the reactor, and a comprehensive heat transfer scheme to express the heat transfer between the inner reactor wall. Microscopic transfer phenomena and reaction dynamics depends on the dimensionless parameters, e.g. the Reynolds number (Re), Prandtl number, Peclet number (Pe) and Grashof number (Gr).

TNL-Injector simulator take into effect gas inlet flow rate, operating pressure and temperature, and reactor geometry configurations. Capable to the growth prediction of binary, ternary and quaternary materials in the AIXTRON AIX200/4 horizontal MOCVD reactor configuration. Precursors’ multi-component diffusion and decomposition are two significant factors that affect the accuracy of a prediction.

The data base for various precursors’ gases and the carrier gases with their chemical reaction rates as described in the chemical kinetics section are available. The gas-phase reactions responsible for the species decomposition and radical reactions, while the surface reactions regard the deposition process to grow the film, involving the adsorption reaction of gas-phase species and the reaction of surface-bonded molecular fragments.

Facilitate a better understanding of basic physical and chemical properties in MOCVD processes, especially the mechanism of film growth kinetics,

Accuracy of reaction kinetics modeling,

Transport phenomena involves a heat transfer scheme between the inner reactor and cooling gas of the outer tube,

Optimization technique to enhance the film growth prediction ability,

Inlet of the reactor is divided into two parts by a separator to drive the group III and V precursors separetely,

Descending steps in form of Schwoebel-Ehrlich barrier and ascending steps in form of incorporation barrier,

Optimization of total flow rate, operating pressure and susceptor temperature parameters

Optimization of Gas-phase and surface kinetics