Atomistic Epitaxial Growth Processes

The explosive growth of the semiconductor materials for nano scale devices, the industry has caused a rapid evolution of high quality crystalline thin-films that lend themselves to the fabrication of state-of-the-art nano device technologies. The research technique named chemical vapor-phase deposition (CVD) along with its variants e.g. Metalorganic vapor-phase epitaxy (MOVPE), also known as organometallic vapor-phase epitaxy (OMVPE) or metalorganic chemical vapor deposition (MOCVD), plasma enhanced chemical vapor deposition (PECVD) and on the other hand molecular beam epitaxy (MBE) etc have shown several tremendous advantages. These growth techniques have developed into the most widely used techniques for thin film preparation in electronics Industry. In the last three decades, tremendous advances have been made in the science and technology of thin films prepared by means of MBE, CVD, PECVD, MOCVD reactors etc for production of epi-wafer for CMOS, HEMT, RF, power, laser and other semiconductor technoligies applications.

The Computer Aided Design (CAD) software can help to realize the deep insight with atomistic scale solution and the proper understanding of the microscopic issues and challenges associated with these reactors based epitaxial growth processes.


To reduce the development cost, time and manpower consumption & to cater semiconductor wafer and epitaxial growth industry needs, the family of TNL-EpiGrow simulators, Material Growth Computer-Aided Design (CAD for Epitaxial Material Growth at Atomistic scale) tools are unmatched solution for reactor based epitaxy. It provides flexibilities to implement real time reactor conditions to perform hits and trails experiments on computer with real reactor’s geometries and various other input conditions. In turn reduce the manpower consumption and save various resources e.g. various gases use as precursors and carriers, reduce process costing, easily detect the types of defects with their quantities etc.


TNL-EpiGrow framework accommodates family of material epitaxy simulators and provides flexibilities for a comprehensive treatment of both theoretical and experimental aspects associated with the epitaxial growth of most classes of vapor phase epitaxy in form of CVD, PECVD, MOCVD reactors and its variants, along with the MBE reactor at atomistic scale. The epitaxial growth processes of semiconductors, insulators, metals, superconductors, and magnetic can be realized and optimized by exploiting theses state of art simulators.

TNL-Optimizer provides flexibilities to run design of experiments (DOE) with capabilities to optimize the input conditions to achieve high quality crystalline films with minimal defects. The epitaxial growth processes of semiconductors, insulators, metals, superconductors can be realized and optimized by exploiting theses state of art simulators.

Capabilities

Graphical User Interface (GUI)
Windows based Application
Various Semiconductor Materials Database
Thermal chemical kinetics
Plasma enhaced chemical kinetics
Users' defined input growth conditions
To handle various gas phase kinetics
To handle various surface phase kinetics
Import users' specific gas & surface phase kinetics
Inbuilt precursor & carrier gases database
kMC based Adsorption, hopping & desorption rates
Reactor geometry parameters as input
molecular beams with various Knudsen cells
Impact of Schwoebel-Enrich barrier energy
Impact of incorporation barrier energy
Impact nearest neighbor energy

Outputs

Mapping each & every atom in each monolayer
Point Defects density with location on lattice
Line Defects density in lattice
Stacking Fault density in lattice
Surface profiles i.e. Roughness
Strain measurement
Lattice Parameter
Optimization of input parameters
Optimization of chemical kinetics
Reduction in waste during experimentation
Ability to deal with different reactive species and reactor geometries
On-line process control