Tech Next Lab (P) Ltd provides inhouse developed world's first commercial Full Energy Band simulator based on lattice constant of the epi grown layer by EpiGrow simulator. The simulator is based on Emperical Pseudopotential method given by Cohen. The EPM involves the fitting of the atomic form factors Va( G) to experiment. The main feature of Full Energy Band simulator is to analyze the electronic band structures of zinc blende and wurtzite materials using the empirical pseudopotential method, with the form factors adjusted to reproduce correctly the most important band features. Relevant energy spacings as well as direct and indirect band gaps nature can also be derived from the band structures. The electron effective masses, DOS at high symmetry points can be obtained using Full Energy Band simulator. The calculated parameters can be callibrated against reported existing experimental data and can be used in the interpretation of experiments and for numerical simulation purposes.
Full Band Simulator is powerful tool, extends the empirical pseudopotential method to include semiconductors with the zincblende as well as wurtzite structures and simulates electronic band structures with appropriate pseudopotential form factors chosen from the reported reputed references for binary alloy semiconductor materials and interpolate the pseudopotential form factors for ternary alloy semiconductor materials to simulate the full electronic band structures of ternary materials. The bowing of band energies and their deformation potentials is included inside simulator in form of alloy disorder. Capable to simulate the full electronic band structures for the lattice constant of monolayer provided by users. Different types of physical parameters e.g. carrier velocity, effective mass and density of states can be easily tracable on the full electronic band structures of the chosen materials. Provides flexibility to users to chose lattice constant and analyse the full electronic band structures over computer.
1. Binary (GaN, GaAs etc.) and ternary (AlGaN, InGaAs etc.)
2. Users input lattice constant
3. Full Electronic Energy Band
4. Extraction of Velocity of carriers in differnet energy states
5. Extraction of Effective Mass of carriers
6. Parabolic & Nonparabolic Modeling
7. Density of state (DOS) calculation
8. Ability to deal with different cubic, Zincblende & Wurtzite alloys
9. Carrier's transport on different Energy levels in full band
Many Mores to be explored by users .....................