TNL-EM Simulator is powerful tool is capable to simulate carriers transport on few valleys & full energy band. The microscopic simulation of the motion of individual particles in the presence of the forces acting on them due to external fields as well as the internal fields of the crystal lattice and other charges in the system. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to intrinsic scattering mechanisms e.g. acoustic & intervalley and extrinsic scattering mechanisms e.g. impurities, defect etc., which randomize the momentum and energy of charge particles in time. Hence, stochastic techniques to model these random scattering events are particularly useful in describing transport in semiconductors, in particular through the Monte Carlo method without any initial assumptions. TNL-EM simulator provides flexibility to users to initialise the carriers over full energy band or on few valleys and analyse the transport of carrier to simulate the ensemble velocity of carriers under external electromagnetic forces on computer.
The physics included in TNL-EM simulator is purely atomistic physics based simulator and simulate the electronic transport in nano-crystalline thin film & bulk semiconductor materials. TNL-EM simulator is "state-of-the-art" simulator which uses the Monte Carlo technique for solution of high-energy carrier dynamics under non-equilibrium transport conditions.
The semiconductors carrier mobility can be modeled beyond the effective-mass approximation on the few valleys or on the full electronic band structure obtained from TNL-FB simulator
The electron-phonon, electron-impurity, and electron-electron scattering rates are included in a way consistent with the full band structure of the solid, thus accounting for density-of-states and matrix-element effects more accurately
Lot of inbuilt examples for cubic, ZB and WZ materials with flexibilities to accomodate USERS DEFINED materials and input parameters
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Graphical User Interface (GUI) based simulator i.e. no need for coding & scripting
User Friendly with Windows based application with full capabilities
Boltzmann transport equation (BTE) solution without any initial assumptions
Ensemble Monte Carlo Technique used for BTE solution
Include various non-linear scattering mechanisms to calibrate the experiments
Fermi Golden Rule for momentum & energy conservation
Modeled beyond the effective-mass approximation on the full electronic band structure obtained from TNL-FB simulator
The electron-phonon, electron-impurity, and electron-electron scattering rates included in a way consistent with the full band structure of the solid
Accounting for density-of-states and matrix-element effects more accurately
Users may trace all the carrier electronic transport properties associated with each single electron
Bunches of examples inbuilt with flexibilities to accomodate
User defined materials & parameters easily
TNL-EM simulator offer COST ECONOMICAL SOLUTION for mobility characterization of nano and bulk materials
User Friendly with Graphical User Interface (GUI) capabilities on windows platform
Fast and efficient algorithms
Users may check all the run outputs during simulation running environment
Purely atomistic physics based modeling capabilities
Elemental, binary and ternary compound semiconductors database available
Users can input electric & magnetic field for analysis of electronic transport
Carrier transport on parabolic or nonparabolic electronic energy band or on few valleys
Input database available for initial parameters
Effect of different scattering mechanisms on carrier's electronic transport
State of Art tool to characterize wafers theoretically in terms of carrier’s velocity