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    TNL Framework

    The size of transistor is relentlessly shrinking since more than last five decades as per Moore’s law. As per the prediction of the 2015 International Technology Roadmap for Semiconductors (ITRS) of the ITRS, the transistor size will continue to scaling down in next 10 years. Currently semiconductor industry is engage for production of 14nm channel length multi gate FETs and R & D is going on for further scaling down the device dimensions. The number of atoms in active regions of such critical dimension of the transistor can be counted. The material behavior at such critical device dimensions changes dependent on the number of atoms. The microscopic understanding of such lower node devices has been hampered. The traditional analytical and numerical approaches to fully capture the complex physics governing their operating principles are showing inability to demonstrate the actual performance of the devices.

    High Power devices (exploting wide band gap semiconductors), technology the microscopic understanding of transportation of carrier's behavior under high applied field is insufficient to fully capture the complex physics governing their operating principles with traditional analytical and numerical methods. TNL introduce an atomistic approach based on simulators, which includes all the relevant ingredients required to model realistic high power semiconductor devices. Lot of atomistic models are require for complete understanding of physical phenomenon occuring inside the device.

    The commercial TCAD tools available today in the market place donot take in to account these atomistic based models into consideration and hence the accuracy of results predicted by these tools are questionable.

    The Tech Next Lab (TNL) provides family of innovative TNL TCAD simulators based on purely atomistic approach.

                                                                                                                                                                                                                                                                    

    Capibilities

    TNL Framework: Constitute a platform for interfacing of epi growth process, material characterization and Monte Carlo Particle device simulators. The StrViewer and TNLPlot tools are capable to handle graphical post processing.

    EpiGrow: World’s first thin film growth simulator based on Kinetic Monte Carlo Algorithms. EpiGrow simulator is capable to handle sp3 semiconductors with Zincblende or Wurtzite phases. It may accurately predict about surface profiling (roughness), defects and strain due to lattice mismatch. The graphical user interface (GUI) feature of EpiGrow simulator makes it “State of Art Simulator”. It can also accurately predict the lattice constant of the monolayer.

    FullBand: Full Band simulator is based on empirical pseudopotential method and simulates dispersion relation (E-k diagram) with the extracted lattice constant of the epi grown thin film grown by EpiGrow simulator. User may extract effective masses on parabolic and non-parabolic energy states, Density of States (DOS) and symmetry points energies on electronic full energy bands. Other relevant information can be obtained with dispersion relation diagram.

    HallMobility: It simulates the mobility of carriers under external electromagnetic field. The carriers transportation dynamics inside material layer is solved by solution of 6 phase Boltzmann equation including standard scattering mechanisms under Fermi Golden rule for conservation of energy and momentum of the carrier over the different energy level in full band.

    MCParticle Device: Fastest Particle based device simulator taking into account the real time transportation of carriers under appropriate applied voltages in different regions. MC Particle device simulator solves Boltzmann-Wigner-Poisson equation for Lower node devices, while users have flexibilities to uncheck the quantum confinement effects for bigger node devices. Poisson’s solution is generated over the node points of the mesh, wherever carrier transport solution is obtained using Ensemble Monte Carlo (EMC) method.