INTRODUCTION

The size of most of semiconductor device technologies are relentlessly shrinking since more than last five decades as per Moore’s law. As per the prediction of the International Technology Roadmap for Semiconductors (ITRS) of the ITRS, the transistor size will continue to scaling down in next 10 years. Currently semiconductor industry is engage for production of 7nm channel length multi gate FETs and R & D is going on for further scaling down the device dimensions into sub nanometer scale. The material behavior at such critical device dimensions eqivalent to atoms dimensions changes dependent on the number of atomic stacks. The microscopic understanding of such lower node devices has been hampered through continuum models. The traditional analytical and numerical approaches to fully capture the complex physics governing their operating principles have shown inability to demonstrate the actual performance of the devices. Therefore, the material growth technique for such nano-scale devices can help to provide deeper insight.

High Power devices, IR sources & detectors, Laser, LED, TFT etc. technologies exploting compound semiconductors. The microscopic understanding of epitaxial material growth and material charaterization, transportation of carrier's behavior under applied field is insufficient to fully capture the complex physics governing their operating principles with traditional analytical and numerical methods. TNL introduces family of simulators based on purely atomistic approach and randomness, follow the natural phenonmenon without using continuum models. The TNL TCAD software includes all the relevant ingredients required to model realistic elemental and compound semiconductor device technologies with proper understanding of physical phenomenon occuring inside the device.

CAPABILITIES

TNL Framework: Constitute a platform for interfacing of epi growth process, material characterization and Monte Carlo Particle device simulators. The StrViewer and TNLPlot tools are capable to handle graphical post processing.

EpiGrow: Family of Innovative reactor based epitaxial growth simulators based on Kinetic Monte Carlo Algorithms. EpiGrow simulator is capable to handle sp2, sp3 semiconductors with Zincblende or Wurtzite phases. It may accurately predict growth rate, various types of defects, surface profile (roughness), and strain due to lattice mismatch, atomic composition, lattice parameters etc. The graphical user interface (GUI) enabled feature makes family of EpiGrow simulators as “State of Art Simulator”. It include CVD, PECVD, MOCVD(Showerhead), MOCVD(Injector) and MBE reactors architectures to to simulate and calibrate the real time epitaxy experiments.

FullBand: Full Band simulator is based on empirical pseudopotential method and simulates dispersion relation (E-k diagram) with the extracted lattice constant of the epi grown thin film grown by EpiGrow simulator. User may extract effective masses on parabolic and non-parabolic energy states, Density of States (DOS) and symmetry points energies on electronic full energy bands. Other relevant information can be obtained with dispersion relation diagram.

HallMobility: It simulates the mobility of carriers under external electromagnetic field. The carriers transportation dynamics inside material layer is solved by solution of 6 phase Boltzmann equation including standard scattering mechanisms under Fermi Golden rule for conservation of energy and momentum of the carrier over the different energy level in full band.

THz Spectroscopy: It simulates the HOT carriers dynamics under the influence of experimental pulse. The carriers transportation inside material layer is solved by solution of 6 phase Boltzmann equation including standard scattering mechanisms using Fermi Golden rule for conservation of energy and momentum of the carrier over the different energy level in full band structure. Best tool for extracting THz conductivity and absorption coefficient.

MCParticle Device: Fastest Particle based device simulator taking into account the real time transportation of carriers under appropriate applied voltages in different regions. MC Particle device simulator solves Boltzmann-Wigner-Poisson equation for Lower node devices, while users have flexibilities to uncheck the quantum confinement effects for bigger node devices. Poisson’s solution is generated over the node points of the mesh, wherever carrier transport solution is obtained using Ensemble Monte Carlo (EMC) method.

BENEFITS

1. Complete Atomistic approach based solutions
2. Epi Growth Process
3. Epi layer Material Characterization
4. Transportation of Carriers inside Epi layer
5. Use of Epi Layer for Device Applications
6. Full Capture of the complex physics governing Device operations
7. Complete real time understaning of physical phenomenon inside device