The TNL-TS (THz Spectroscopy) Simulator is a powerful tool for simulating the dynamics of charged particles interacting with THz phonons. Individual particle motion under THz pulses, characterize the HOT carrier conductivity including non-linear scatterings from impurities and lattice vibrations, disrupting charge carrier momentum and energy. Stochastic modeling effectively characterizes charge carrier transitions in bulk and nanomaterials. The Monte Carlo method, used to solve the Boltzmann transport equation under THz pulses from hundreds of gigahertz to several terahertz. The simulator can also model the microscopic conductivity of weakly confined classical electrons without needing approximations or fitting parameters.
The TNL Terahertz (THz) Spectroscopy Simulator is a unique tool for simulating material properties under electromagnetic fields from terahertz pulses. It provides a flexible approach to resolving and controlling individual carrier transitions among many-body states, enhancing understanding of atomistic and quantum kinetics and advancing technologies at the quantum level.
Accurate predictions for interaction & impact of THz pulse on electronic transport through inter and intravalley carriers transition for group IV, III-V and II-VI compounds materials
THz Spectroscopy simulator is valuable tool for studying charge carrier transport in Bulk and nanomaterials
In THz Spectroscopy simulator, THz pulse is use as ultrafast probe of inter & intraband excitations in nanoparticle ensembles and provide unique information for next generation nanomaterial engineering
It is capable to extract THz conductivities and absorption for variety of semiconductors thin and thick films along with carrier population inversion details including various scattering mechanisms
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Graphical User Interface (GUI) based simulator i.e. no need for coding & scripting
User Friendly with Windows based application with full capabilities
Powerful tool to simulates motion of charged, and interacting particles
Microscopic simulation of the motion of individual particles under the influence of the THz pulse as well as the internal fields of the crystal lattice and influence of other charges, lattice defects etc
Include various non-linear scattering mechanisms to calibrate the real time THz experiments
Fermi Golden Rule for momentum & energy conservation
Random scattering events, particularly useful in describing inter and intraband transitions of charge carriers in bulk & nanomaterials
Flexibility for users to initialise the carriers distribution over many valleys or lowest energy lying valley of the material
Beauty of simulator, it follows Afbau principle i.e. under static field most of high energy valley carriers tranfer to lowest energy lying valley
THz Pulses applications with frequencies ranging from few hundred gigahertz to several terahertzs
Users may trace all the carrier electronic dynamics associated with influence of THz pulses on motion for each single electron
Bunches of examples inbuilt with flexibilities to accomodate USERS defined materials & parameters easily
TNL-TS simulator offer COST ECONOMICAL SOLUTION for calibration of THz spectroscopy experiments of nano and bulk materials
User Friendly with Graphical User Interface (GUI) capabilities on windows platform
Fast and efficient algorithms with variety of material database with flexibilites to ramp USERS define THz frequencies
Users may track all the run outputs i.e. position, momentum, energy, valley occupation etc parameters during simulation running environment
Purely atomistic physics based modeling capabilities
Elemental, binary and ternary compound semiconductors database available
Ability to controlling & optimizing individual carrier transitions between different intrabands in many body states
Extraction of the THz conductivities and absorption along with other associated parameters
Various INBUILT scattering mechanisms used for calibration of experimental findings
To avoid the transient effects that accompany the turnon of the electric field, all time steps prior to a total elapsed time can be discarded
State of Art tool for accurately prediction of the conductivity of a weakly confined Drude gas of electrons without any initial assumptions