The TNL-Injector simulator features a horizontal MOCVD reactor that models gas-phase and surface reactions, due to thermal conditions within the reactor. Key dimensionless parameters, such as Reynolds number (Re), Prandtl number, Peclet number (Pe), and Grashof number (Gr), influence the chemical reaction dynamics.

Influence of precursors and carrier gases inlet flow rate, operating pressure, temperature, and reactor geometry (Aixtron, Veeco and Taiyo Nippon), effectively predicting the growth of binary, ternary, and quaternary materials with multi-component diffusion and precursor decomposition.

A database of precursor and carrier gases, including their chemical reaction rates, is available. Gas-phase reactions drive species decomposition and radical interactions, while surface reactions facilitate film growth through gas-phase species adsorption and surface-bound molecular fragment reactions.

Facilitate a better understanding of basic physical and chemical properties in MOCVD processes, especially the mechanism of film growth kinetics,

Accuracy of reaction kinetics modeling,

Transport phenomena involves a heat transfer scheme between the inner reactor and cooling gas of the outer tube,

Optimization technique to enhance the film growth prediction ability,

Inlet of the reactor is divided into two parts by a separator to drive the different group precursors separetely or in-mixing with carrier gas,

Descending steps treated with Schwoebel-Ehrlich barrier and ascending steps by incorporation barrier,

Optimization of total flow rate, operating pressure and susceptor temperature parameters