World's Fastest Monte Carlo Particle Device simulator includes transport model solution with a self -consistent Boltzmann-Poisson equation and a GUI based feature helps users to select device geometry and doping density in 2D and 3D. Users may use input physical parameters from bydefault III-V and II-VI (binary & ternary) semiconductor materials database (including zincblende as well as wurtzite phases) or having flexibility to put own input parameters. The different carrier scattering mechanisms has major influence on the performance of device output and dependent on the density of states (DOS) in each valley which can be accurately inputted through full band structure. The effect of equilibrium states of carrier before start of free flight of carrier has been incorporated in term of inclusion of depletion region through movement of the ensemble of carriers under influence of external electrostatic field obtained by solving the Poisson equation. The quantum confinement effect includes density gradient approach and effective potential approach for computation of quantum confinement effects on the carrier transport under influence of external forces. Particle Device Simulator (PDS) is exploited for unipolar as well as bipolar semiconductor technologies based devices including MOSFET, Multigate FETS, HEMT and P-N junction devices.

Monte Carlo particle simulator takes into account the transport of Monte Carlo particles (also called as superparticles) under influence of applied external field that is determined self-consistently through the solution of decoupled Poisson's and BTE equation over a suitably small time-step. The time step is taken typically less than the inverse plasma frequency obtained with the highest carrier density in the device. Poisson’s solution is generated over the node points of the mesh, wherever carrier transport solution is obtained using Ensemble Monte Carlo (EMC) on the full range of space coordinates in accordance with the particle distribution itself. Particle-mesh (PM) coupling scheme is used for assignment of carrier charge on different nodes and for calculation force on each charges.

User Friendly with Graphical User Interface (GUI) capabilities on windows platform
Fast and efficient algorithms with variety of material database
Users may track all the run outputs i.e. position, momentum, energy, valley occupation etc parameters during simulation running environment
Purely atomistic device physics based modeling capabilities, no need for initial assumptions as in case Drift-Diffusion model
Ensemble Monte Carlo (EMC) technique for solution og Boltzmann transport equation (BTE)
Ability to controlling & optimizing individual carrier transitions between different intrabands in many body states
Various INBUILT scattering mechanisms used for calibration of experimental I-V characteristics
Number of carrier’s initialization & distribution depends on Users Hardware configuration
State of Art tool for accurately prediction of I-V characteristics including velocity overshoot, dopants fluctuation and roughness etc effect