The TNL-FullBand simulator employs the empirical pseudopotential method (EPM), which entails fitting atomic form factors to experimental data. A key characteristic of the Full Energy Band simulator is its capability to analyze the electronic band structures of sp3 and sp2 materials to accurately reflect the most significant band features. Additionally, it allows for the derivation of relevant energy spacings and the nature of both direct and indirect band gaps from the band structures. The thickness and orientation dependent band gap. The simulator can also provide information on electron effective masses and the density of states (DOS) at high symmetry points.
Electronic structure of the group IV, III-V and II-VI binary compounds including Cubic, Zincblende & Wurtzite
Pseudopotetial method with virtual crystal approximation (VCA) and alloy disorder contribution
Impact of thin/thick film thickness and Effect of wafer orientation on bandgap energy
Users input lattice constant with bunches of inbuilt examples for cubic, ZB and WZ materials
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FullBand simulator is powerful tool to extract electronic full band structure by using lattice constant (a and c)
Inbuilt method (EPM) provide flexibilities for direct fit of the V(G)'s to the experimental band structures
Accurate prediction of electronic properties and work as a source of factual information about semiconductors
Solution through Schrodinger wave equation, which makes it computationally much cheaper than ab-initio methods
Band structures, carrier effective mass, electronic densities of states, and valence charge densities etc can be extracted
Film thickness and orientation influence the band structure
Windows based Graphical User Interface (GUI) Capabilities
Binary (GaN, GaAs etc.) and ternary (AlGaN, InGaAs etc.)
Users input lattice constant
Full Electronic Energy Band
Extraction of Velocity of carriers in different energy states
Extraction of Effective Mass of carriers
Density of state (DOS) calculation
Ability to deal with different sp3 and sp2 alloys
Carrier's position & energy on different Energy levels in full band