The TNL-Shwrhead simulator features a showerhead MOCVD reactor that uses a perforated surface to evenly distribute reactant gases to a parallel surface, allowing for a shower-like delivery of precursors. This setup is ideal for batch processing multiple substrates or individual wafers. Understanding the showerhead MOCVD growth process is crucial for atomistic-scale growth and optimizing input parameters, serving as a reference for reactor design.

The simulator includes a database of precursor and carrier gases with their chemical reaction rates, facilitating reactions of progress (ROP) analysis to optimize reaction pathways and enabling accurate predictions of growth rates and defect densities.

Users can utilize their own gas-phase and surface-phase reactions, with chemical kinetics processes in the reactor influenced by pressure and substrate surface temperature

Residence time, the duration a particle or gas molecule spends in the stream, is dependent on the ceiling height (Hc)

Diffusion time, computed by diffusion length, and the boundary layer thickness (δ)

Boundary layer thickness δ is independent of the radial position,

Descending steps are implemented by the Schwoebel-Ehrlich barrier, while ascending steps involve the incorporation barrier

Mass transport and surface limited conditions are dependent on convection or diffusion processes as per input conditions and reactor geometry

Diffusion length (Ld) is dependent on the mass diffusivity (D)