1. Full Electronic Band structure modeling with extraction of energy wavevector (E-k) data, carrier group velocity, density of states, effective mass etc. Modeling of Bandgap dependency on the film thickness and orientation of sp² and sp³ materials.

2. Carrier field mobility modeling services including non-linear scatterings with calibration of experiments.

3. Experimental calibration of interaction of THz pulses with semiconductors. The modeling included extraction of amplitude, frequency and phase of experimental THz pulses. HOT carrier dynamics extraction with information of each carrier transportation information on different valleys due to absorption of energy from THz photons.