In TNL-Shwrhead simulator geomerty architecture includes showerhead plate. The precursors gases pass through a perforated or porous planar surface which use to dispense reactant gases more-or-less uniformly over a second parallel showerhead plate planar surface . Vertical flow of precursors through a plate containing porous holes drives precursors in form of showers.
TNL-Shwrhead simulator's configuration can be used for batch processing multiple substrates, but also lends itself to processing single square wafers. The proper understanding of the process of showerhead MOCVD film to extract growth at atomistic scale. It is use to optimize of various input physical parameters. It may also use as a reference for the structural design of reactors by changing the various parameters e.g. distance between showerhead plate and substrate, changing showerhead plate zone temperature etc.
The various precursors’ and the carrier gases data base are inbuilt with showerhead software. Also, various chemical reaction kinetics as described in the chemical kinetics section are available with the TNL-Shwrhead simulator. The complicated chemical mechanisms are simplified through rate of production (ROP) analysis for optimization of chemical reaction mechanisms enabling the accurate prediction of growth rates and defect density qualitatively & quantitatively. TNL-Shwrhead simulator also have flexibility to accomodate user defined precursors and chemical reactions kinetics.
With innovative capabilities and reliability shown by TNL-Shwrhead simulator, we may assure our customers to reproduce the MOCVD=Showerhead reactor deposition process effciently with deeper informations, unavailable with any sophisticted instruments.
