TNL-Injector simulator, the reactor architecture takes into account the horizontal flow of metal-organic precursors, chemical reactions take place.Occurance of gas-phase and surface reactions in the reactor, and a comprehensive heat transfer scheme to express the heat transfer between the inner reactor wall is inbuilt. Microscopic transfer phenomena and reaction dynamics depends on the dimensionless parameters, e.g. the Reynolds number (Re), Prandtl number, Peclet number (Pe) and Grashof number (Gr).
TNL-Injector simulator take into account gas inlet flow rate, operating pressure and temperature, and reactor geometry configurations. Capable of the accurate growth rate prediction for binary, ternary and quaternary materials in a similar manner as the AIXTRON AIX200/4 horizontal MOCVD reactor configuration do.
Precursors’ multi-component diffusion and decomposition are two significant factors that affect the accuracy of a prediction. The data base for various precursors’ gases and the carrier gases with their chemical reaction kinetics are inbuilt. The gas-phase reactions are responsible for the species decomposition and radical reactions, while the surface phase reactions regard the deposition process to grow the film, involving the adsorption reaction of gas-phase species and the reaction of surface-bonded molecular fragments.
With innovative capabilities and reliability shown by TNL-Injector simulator, we may assure our customers to reproduce the horizontal MOCVD reactor deposition processes effciently with deeper informations unavailable with any sophisticted characterization instruments.
