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Atomistic simulation solution of MBE epitaxy of 6.1-Å semiconductors multiple QW heterostructures
Uncovering the influence of nitridation on the dislocation density at atomistic scale in III-Nitrides MOCVD/MOVPE epitaxy process
MOCVD/MOVPE epitaxy of group III-V nitride with atomistic Prospective & cost Effectiveness


Full Electronic Band Structure Characterization of Al‑Doped ZnO Nanocrystalline Films Through Simulation.
Epitaxy Solution of the III-V Antimonides/Arsenides Quantum Well Heterostructure for IR Detector Applications: TNL-EpiGrow Simulator.
MOCVD Epitaxy Solution of HgCdTe Heterostructures for Infrared Detectors through An Innovative Simulation Technique.


MBE Epitaxy Solution of the Quantum Well Heterostructure: Atomistic TNL-EpiGrow Simulator.
Defect Analysis of MBE Reactor Grown HgCdTe on Si, GaAs, GaSb, CZT Substrates Through TNL-EPIGROW Simulator.
MOCVD/MOVPE Epitaxy Solution of Group III-V Nitride with Atomistic Prospective and Cost Effectiveness
Epitaxy of III-V Nitrides with Strain Relief Layers Analysis— TNL EpiGrow Simulator.
An Atomistic insights for Predictive In-Silico Chemical Vapor Deposition.
Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution.
Defect analysis of HgCdTe deposited on GaAs, GaSb, CZT through MBE process: TNL-EpiGrow Simulator.
Impact of various defects on Carrier Field Mobility in ZnO thin films.
Full Electronic Band structure characterization of ZnO Nanorod
Nonlinear Ultrafast carrier’s dynamics with scattering rate saturation in Ge thinfilms.
An Innovative Model for Electronic Band Structure Analysis of Doped and Un-Doped ZnO.
An innovative technique for electronic transport model of group-III nitrides.
Numerical simulation of InxGa1-xAs/InP PIN photodetector for optimum performance at 298 K.
HEMT growth to Device: Advances in Electrical Control and Signal Systems, Chapter 61, ISBN No. -9789811552618, 2020.
"Full Electronic Band Structure Analysis of Cd Doped ZnO Thin Films Deposited by SOL-GEL SPIN COATING METHOD ".
"An innovative approach for controlled epitaxial growth of GaAs in real MOCVD reactor environment".
"Infrared Phototectors: Some techniques for Modeling & Simulation, 2018.
Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement, Defense Science journal, Vol 67, No 2, pp. 141-148, 2017.
EpiGrow Simulator Technical details.
Semiconductor Materials Mobility Characterization Tutorial
ors through An Innovative Simulation Technique